BD681

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NPN Silicon Transistor General Purpose

4.00 EGP 4.0 EGP 4.00 EGP

4.00 EGP

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Internal Reference: BD681

Features

  • Collector-Emitter Volt (Vceo): 100V
  • Collector-Base Volt (Vcbo): 100V
  • Collector Current (Ic): 4A
  • hfe: 750
  • Power Dissipation (Ptot): 40W
  • Type: NPN

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